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HN1B04FE-GR,LF(T

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
The TOSHIBA HN1B04FE-GR,LF(T) is designed for use in low-frequency amplifiers, making it suitable for applications in consumer electronics and telecommunications. Its high voltage and current ratings, along with excellent hFE linearity, enhance its performance in various electronic circuits.
Detailed specification
Detailed specification
TOSHIBA - HN1B04FE-GR,LF(T - Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 150 mA, 150 mA, 100 mW
TOSHIBA - HN1B04FE-GR,LF(T - Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 150 mA, 150 mA, 100 mW
Description
Description
The TOSHIBA HN1B04FE-GR,LF(T) is a bipolar transistor array featuring complementary NPN and PNP transistors. It supports a maximum collector-emitter voltage of 50 V, a collector current of 150 mA, and a power dissipation of 100 mW. The device is suitable for low-frequency amplifier applications with high hFE linearity.
The TOSHIBA HN1B04FE-GR,LF(T) is a bipolar transistor array featuring complementary NPN and PNP transistors. It supports a maximum collector-emitter voltage of 50 V, a collector current of 150 mA, and a power dissipation of 100 mW. The device is suitable for low-frequency amplifier applications with high hFE linearity.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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