HN1B04FE-GR,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
TOSHIBA - HN1B04FE-GR,LF(T - Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 150 mA, 150 mA, 100 mW
TOSHIBA - HN1B04FE-GR,LF(T - Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 150 mA, 150 mA, 100 mW
Description
Description
The TOSHIBA HN1B04FE-GR,LF(T) is a bipolar transistor array featuring complementary NPN and PNP transistors. It supports a maximum collector-emitter voltage of 50 V, a collector current of 150 mA, and a power dissipation of 100 mW. The device is suitable for low-frequency amplifier applications with high hFE linearity.
The TOSHIBA HN1B04FE-GR,LF(T) is a bipolar transistor array featuring complementary NPN and PNP transistors. It supports a maximum collector-emitter voltage of 50 V, a collector current of 150 mA, and a power dissipation of 100 mW. The device is suitable for low-frequency amplifier applications with high hFE linearity.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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