HN1A01F-GR(TE85L,F
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS 2PNP 50V 0.15A SM6
TRANS 2PNP 50V 0.15A SM6
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 300mW Surface Mount SM6
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 300mW Surface Mount SM6
Description
Description
The HN1A01F-GR(TE85L,F) is a dual PNP bipolar transistor array designed for audio frequency general-purpose amplifier applications. It features a maximum collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -150mA, and a power dissipation of 300mW. The device operates at a transition frequency (fT) of 80MHz and offers high DC current gain (hFE) ranging from 120 to 400, ensuring excellent linearity.
The HN1A01F-GR(TE85L,F) is a dual PNP bipolar transistor array designed for audio frequency general-purpose amplifier applications. It features a maximum collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -150mA, and a power dissipation of 300mW. The device operates at a transition frequency (fT) of 80MHz and offers high DC current gain (hFE) ranging from 120 to 400, ensuring excellent linearity.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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