HFA3127RZ
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
RF TRANS 5 NPN 12V 8GHZ 16QFN
RF TRANS 5 NPN 12V 8GHZ 16QFN
Detailed specification
Detailed specification
RF Transistor 5 NPN 12V 65mA 8GHz 150mW surface-mounted 16-QFN (3x3 mm (0.12x0.12 in))
RF Transistor 5 NPN 12V 65mA 8GHz 150mW surface-mounted 16-QFN (3x3 mm (0.12x0.12 in))
Description
Description
The HFA3127RZ is an ultra high frequency NPN RF transistor designed for applications up to 8GHz. It operates at a collector-emitter voltage of 12V and a maximum collector current of 65mA, delivering a power dissipation of 150mW. This surface-mounted device is housed in a 16-QFN (3x3) package, ensuring efficient thermal and electrical performance.
The HFA3127RZ is an ultra high frequency NPN RF transistor designed for applications up to 8GHz. It operates at a collector-emitter voltage of 12V and a maximum collector current of 65mA, delivering a power dissipation of 150mW. This surface-mounted device is housed in a 16-QFN (3x3) package, ensuring efficient thermal and electrical performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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