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HFA3102BZ

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
HFA3102BZ is suitable for RF applications, including single balanced mixers, differential amplifiers, and wireless communication systems. Its high gain-bandwidth product and low noise figure make it ideal for radio and satellite communications, as well as fiber optic signal processing.
Specification
Specification
RF TRANS 6 NPN 12V 10GHZ 14SOIC
RF TRANS 6 NPN 12V 10GHZ 14SOIC
Detailed specification
Detailed specification
RF Transistor 6 NPN 12V 30mA 10GHz 250mW surface-mounted 14-SOIC
RF Transistor 6 NPN 12V 30mA 10GHz 250mW surface-mounted 14-SOIC
Description
Description
The HFA3102BZ is a dual NPN transistor array designed for RF applications, featuring a high fT of 10GHz and a collector current of 30mA. It operates at a collector-emitter voltage of 12V and offers low collector leakage currents (<0.01nA). This surface-mounted device is ideal for differential amplifiers and wideband amplification stages.
The HFA3102BZ is a dual NPN transistor array designed for RF applications, featuring a high fT of 10GHz and a collector current of 30mA. It operates at a collector-emitter voltage of 12V and offers low collector leakage currents (<0.01nA). This surface-mounted device is ideal for differential amplifiers and wideband amplification stages.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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