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HERAF808G

Manufacturer

TAIWAN SEMICONDUCTORS

data-sheet
Data sheet
Data sheet
HERAF808G is designed for use in industrial applications, particularly in DC to DC converters, switching mode converters, and inverters. Its high reliability and surge current capability make it ideal for demanding environments where efficiency and performance are critical.
Specification
Specification
DIODE GEN PURP 1KV 8A ITO220AC
DIODE GEN PURP 1KV 8A ITO220AC
Detailed specification
Detailed specification
Diode 1000 V 8A Through Hole ITO-220AC
Diode 1000 V 8A Through Hole ITO-220AC
Description
Description
The HERAF808G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 8 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package and is suitable for various applications including DC to DC converters and switching mode power supplies.
The HERAF808G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 8 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package and is suitable for various applications including DC to DC converters and switching mode power supplies.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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