HERAF808G
Manufacturer
TAIWAN SEMICONDUCTORS
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 1KV 8A ITO220AC
DIODE GEN PURP 1KV 8A ITO220AC
Detailed specification
Detailed specification
Diode 1000 V 8A Through Hole ITO-220AC
Diode 1000 V 8A Through Hole ITO-220AC
Description
Description
The HERAF808G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 8 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package and is suitable for various applications including DC to DC converters and switching mode power supplies.
The HERAF808G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 8 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package and is suitable for various applications including DC to DC converters and switching mode power supplies.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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