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HERAF1008G

Manufacturer

TAIWAN SEMICONDUCTORS

data-sheet
Data sheet
Data sheet
HERAF1008G is suitable for use in industrial applications such as DC to DC converters, switching mode converters, and inverters. Its high reliability and efficiency make it ideal for demanding environments where performance and durability are critical.
Specification
Specification
DIODE GEN PURP 1KV 10A ITO220AC
DIODE GEN PURP 1KV 10A ITO220AC
Detailed specification
Detailed specification
Diode 1000 V 10A Through Hole ITO-220AC
Diode 1000 V 10A Through Hole ITO-220AC
Description
Description
The HERAF1008G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 10 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package, ensuring reliable performance in various applications.
The HERAF1008G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 10 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package, ensuring reliable performance in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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