HAT2099H-EL-E
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 30V 50A LFPAK
MOSFET N-CH 30V 50A LFPAK
Detailed specification
Detailed specification
N-Channel 30 V 50A (Ta) 30W (Tc) surface-mounted LFPAK
N-Channel 30 V 50A (Ta) 30W (Tc) surface-mounted LFPAK
Description
Description
The HAT2099H-EL-E is an N-Channel MOSFET designed for power switching applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 50A. It operates efficiently with a low on-resistance (RDS(on)) of 2.9 mΩ at VGS = 10V, making it suitable for high-density mounting in surface-mounted configurations. The device supports a gate drive voltage of 4.5V and has a channel dissipation rating of 30W, ensuring reliable performance in various applications.
The HAT2099H-EL-E is an N-Channel MOSFET designed for power switching applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 50A. It operates efficiently with a low on-resistance (RDS(on)) of 2.9 mΩ at VGS = 10V, making it suitable for high-density mounting in surface-mounted configurations. The device supports a gate drive voltage of 4.5V and has a channel dissipation rating of 30W, ensuring reliable performance in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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