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HAT2099H-EL-E

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
HAT2099H-EL-E is ideal for power switching applications in industrial and consumer electronics. Its specifications make it suitable for use in power management circuits, motor drivers, and other applications requiring efficient switching performance and thermal management.
Specification
Specification
MOSFET N-CH 30V 50A LFPAK
MOSFET N-CH 30V 50A LFPAK
Detailed specification
Detailed specification
N-Channel 30 V 50A (Ta) 30W (Tc) surface-mounted LFPAK
N-Channel 30 V 50A (Ta) 30W (Tc) surface-mounted LFPAK
Description
Description
The HAT2099H-EL-E is an N-Channel MOSFET designed for power switching applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 50A. It operates efficiently with a low on-resistance (RDS(on)) of 2.9 mΩ at VGS = 10V, making it suitable for high-density mounting in surface-mounted configurations. The device supports a gate drive voltage of 4.5V and has a channel dissipation rating of 30W, ensuring reliable performance in various applications.
The HAT2099H-EL-E is an N-Channel MOSFET designed for power switching applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 50A. It operates efficiently with a low on-resistance (RDS(on)) of 2.9 mΩ at VGS = 10V, making it suitable for high-density mounting in surface-mounted configurations. The device supports a gate drive voltage of 4.5V and has a channel dissipation rating of 30W, ensuring reliable performance in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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