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Manufacturers

HAF2015RJ-EL-E

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
HAF2015RJ-EL-E is utilized in power switching applications across various domains including industrial, consumer electronics, and telecommunications. Its features such as logic level operation, high endurance against short circuits, and built-in thermal protection make it ideal for use in computers, office equipment, and communication devices.
Specification
Specification
ABU / MOSFET
ABU / MOSFET
Detailed specification
Detailed specification
Power Switch/Driver 1:1 N-Channel 2A 8-SOP
Power Switch/Driver 1:1 N-Channel 2A 8-SOP
Description
Description
The HAF2015RJ-EL-E is a N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 2 A. The device includes a built-in over-temperature shut-down circuit, ensuring reliable operation under high junction temperatures. It operates with a gate drive voltage of 5 to 6 V and has a low on-state resistance (RDS(on)) of 130 to 200 mΩ, making it suitable for high-density mounting in various electronic applications.
The HAF2015RJ-EL-E is a N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 2 A. The device includes a built-in over-temperature shut-down circuit, ensuring reliable operation under high junction temperatures. It operates with a gate drive voltage of 5 to 6 V and has a low on-state resistance (RDS(on)) of 130 to 200 mΩ, making it suitable for high-density mounting in various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Nicklas Johansson031-338 96 93nicklas.johansson@westcomp.se
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Patrick Wiström031-338 96 64patrick.wistrom@westcomp.se
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Petra Målberg031-338 96 79petra.malberg@westcomp.se
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Richard Mattsson031-338 96 84richard.mattsson@westcomp.se
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