H11F1M
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISOLTR 4170V PHOTO FET 6DIP
OPTOISOLTR 4170V PHOTO FET 6DIP
Detailed specification
Detailed specification
Optoisolator MOSFET Output 4170Vrms 1 Channel 6-DIP
Optoisolator MOSFET Output 4170Vrms 1 Channel 6-DIP
Description
Description
The H11F1M from onsemi is an optoisolator featuring a MOSFET output with a maximum isolation voltage of 4170 Vrms. It consists of a Gallium−Aluminum−Arsenide IRED coupled to a bilateral silicon photo-detector, designed for distortion-free control of low-level AC and DC signals. This device is suitable for applications requiring high isolation and low offset voltage.
The H11F1M from onsemi is an optoisolator featuring a MOSFET output with a maximum isolation voltage of 4170 Vrms. It consists of a Gallium−Aluminum−Arsenide IRED coupled to a bilateral silicon photo-detector, designed for distortion-free control of low-level AC and DC signals. This device is suitable for applications requiring high isolation and low offset voltage.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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