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H11D3M

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
H11D3M is designed for use in power supply regulators, digital logic inputs, microprocessor inputs, appliance sensor systems, and industrial controls. Its high voltage capability and isolation ratings make it ideal for applications in industrial and consumer electronics where safety and reliability are critical.
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Description
Description
The H11D3M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin DIP package, making it suitable for various applications requiring electrical isolation.
The H11D3M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin DIP package, making it suitable for various applications requiring electrical isolation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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