H11D1
Manufacturer
VISHAY
Data sheet
Data sheet
Specification
Specification
OPTOISO 5.3KV TRANS W/BASE 6DIP
OPTOISO 5.3KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 5300Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 5300Vrms 1 Channel 6-DIP
Description
Description
The H11D1 is an optoisolator featuring a GaAs infrared emitting diode optically coupled to a silicon phototransistor. It offers a high collector-emitter breakdown voltage of 300 V, isolation voltage of 5300 Vrms, and low coupling capacitance, making it suitable for signal transmission between electrically isolated circuits.
The H11D1 is an optoisolator featuring a GaAs infrared emitting diode optically coupled to a silicon phototransistor. It offers a high collector-emitter breakdown voltage of 300 V, isolation voltage of 5300 Vrms, and low coupling capacitance, making it suitable for signal transmission between electrically isolated circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
H11D1 is also available from the following manufacturersContact sales
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