GT50JR21(STA1,E,S)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
PB-F IGBT / TRANSISTOR TO-3PN(OS
PB-F IGBT / TRANSISTOR TO-3PN(OS
Detailed specification
Detailed specification
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
Description
Description
The GT50JR21 is a 600 V, 50 A, 230 W N-Channel IGBT designed for current-resonant inverter switching applications. It features a low saturation voltage of VCE(sat) = 1.45 V (typ.) and high-speed switching capabilities with tf = 0.08 µs (typ.). The device is housed in a TO-3P(N) package and supports a maximum junction temperature of 175°C.
The GT50JR21 is a 600 V, 50 A, 230 W N-Channel IGBT designed for current-resonant inverter switching applications. It features a low saturation voltage of VCE(sat) = 1.45 V (typ.) and high-speed switching capabilities with tf = 0.08 µs (typ.). The device is housed in a TO-3P(N) package and supports a maximum junction temperature of 175°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Bengt or one of our other skilled sales representatives. They'll help you find the right service option.C