GAN063-650WSAQ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
GANFET N-CH 650V 34.5A TO247-3
GANFET N-CH 650V 34.5A TO247-3
Detailed specification
Detailed specification
N-Channel 650 V 34.5A (Tc) 143W (Tc) Through Hole TO-247-3
N-Channel 650 V 34.5A (Tc) 143W (Tc) Through Hole TO-247-3
Description
Description
The GAN063-650WSA is a 650 V, 34.5 A N-Channel Gallium Nitride (GaN) FET in a TO-247-3 package. It features a low on-state resistance (RDS(on)) of 50 mΩ, robust gate oxide, and high gate threshold voltage, making it suitable for high-efficiency applications in power conversion.
The GAN063-650WSA is a 650 V, 34.5 A N-Channel Gallium Nitride (GaN) FET in a TO-247-3 package. It features a low on-state resistance (RDS(on)) of 50 mΩ, robust gate oxide, and high gate threshold voltage, making it suitable for high-efficiency applications in power conversion.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Patrick or one of our other skilled sales representatives. They'll help you find the right service option.C