FQD13N10LTM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 10A DPAK
MOSFET N-CH 100V 10A DPAK
Detailed specification
Detailed specification
N-Channel 100 V 10A (Tc) 2.5W (Ta), 40W (Tc) surface-mounted TO-252AA
N-Channel 100 V 10A (Tc) 2.5W (Ta), 40W (Tc) surface-mounted TO-252AA
Description
Description
The FQD13N10LTM is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 10A at a case temperature of 25°C. The device has a low on-state resistance (RDS(on)) of 180 mΩ at VGS = 10V and ID = 5A, making it suitable for efficient power management in various applications. The package type is DPAK, allowing for surface-mounted configurations.
The FQD13N10LTM is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 10A at a case temperature of 25°C. The device has a low on-state resistance (RDS(on)) of 180 mΩ at VGS = 10V and ID = 5A, making it suitable for efficient power management in various applications. The package type is DPAK, allowing for surface-mounted configurations.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
FQD13N10LTM is also available from the following manufacturersContact sales
Contact Bengt or one of our other skilled sales representatives. They'll help you find the right service option.C