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FQD13N06LTM

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FQD13N06LTM is designed for industrial applications, particularly in power management and switching circuits. Its low on-state resistance and gate charge characteristics make it suitable for use in DC-DC converters, motor drivers, and other high-efficiency power applications.
Specification
Specification
MOSFET N-CH 60V 11A DPAK
MOSFET N-CH 60V 11A DPAK
Detailed specification
Detailed specification
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Description
Description
The FQD13N06LTM is a 60V N-Channel MOSFET in a DPAK package, capable of handling continuous drain currents of 11A at 25°C and 7A at 100°C. It features a low on-state resistance (RDS(ON)) of < 115mΩ at VGS = 10V and < 145mΩ at VGS = 5V. The device supports low gate charge (typ. 4.8 nC) and is suitable for direct operation from logic drivers, making it ideal for efficient switching applications.
The FQD13N06LTM is a 60V N-Channel MOSFET in a DPAK package, capable of handling continuous drain currents of 11A at 25°C and 7A at 100°C. It features a low on-state resistance (RDS(ON)) of < 115mΩ at VGS = 10V and < 145mΩ at VGS = 5V. The device supports low gate charge (typ. 4.8 nC) and is suitable for direct operation from logic drivers, making it ideal for efficient switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FQD13N06LTM is also available from the following manufacturers
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