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FM18W08-SG

Manufacturer

CYPRESS

data-sheet
Data sheet
Data sheet
FM18W08, suitable for industrial applications, is ideal for nonvolatile memory solutions requiring frequent writes, such as data logging, smart meters, and industrial automation systems. Its high endurance and reliability make it superior to traditional battery-backed SRAM, eliminating battery concerns and enhancing system design.
Specification
Specification
FRAM (FERROELECTRIC RAM) MEMORY
FRAM (FERROELECTRIC RAM) MEMORY
Detailed specification
Detailed specification
FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 28-SOIC
FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 28-SOIC
Description
Description
The FM18W08 is a 256-Kbit (32 K × 8) ferroelectric RAM (F-RAM) memory IC from Cypress Semiconductor. It features high endurance with 100 trillion read/write cycles and 151 years of data retention. Operating voltage ranges from 2.7 V to 5.5 V, with a low power consumption of 12 mA (max) active current and 20 µA (typ) standby current. The device is housed in a 28-pin SOIC package and is suitable for applications requiring nonvolatile memory with fast write capabilities.
The FM18W08 is a 256-Kbit (32 K × 8) ferroelectric RAM (F-RAM) memory IC from Cypress Semiconductor. It features high endurance with 100 trillion read/write cycles and 151 years of data retention. Operating voltage ranges from 2.7 V to 5.5 V, with a low power consumption of 12 mA (max) active current and 20 µA (typ) standby current. The device is housed in a 28-pin SOIC package and is suitable for applications requiring nonvolatile memory with fast write capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FM18W08-SG is also available from the following manufacturers
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