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FDV303N

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDV303N is ideal for applications in portable electronics, including cellular phones and pagers, where efficient power management is critical. Its low gate drive requirements allow direct operation in 3V circuits, making it suitable for battery circuits using lithium or cadmium cells. The device's robust ESD protection and compact size enhance its reliability in consumer electronics.
Specification
Specification
MOSFET N-CH 25V 680MA SOT23
MOSFET N-CH 25V 680MA SOT23
Detailed specification
Detailed specification
N-Channel 25 V 680mA (Ta) 350mW (Ta) surface-mounted SOT-23-3
N-Channel 25 V 680mA (Ta) 350mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDV303N is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 25V and a continuous drain current of 680mA. It offers low on-state resistance (RDS(ON)) of 0.45 Ω at VGS = 4.5 V, making it suitable for battery-powered devices. The device is housed in a compact SOT-23 package, ensuring efficient space utilization in electronic designs.
The FDV303N is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 25V and a continuous drain current of 680mA. It offers low on-state resistance (RDS(ON)) of 0.45 Ω at VGS = 4.5 V, making it suitable for battery-powered devices. The device is housed in a compact SOT-23 package, ensuring efficient space utilization in electronic designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDV303N is also available from the following manufacturers
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