FDV303N
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 25V 680MA SOT23
MOSFET N-CH 25V 680MA SOT23
Detailed specification
Detailed specification
N-Channel 25 V 680mA (Ta) 350mW (Ta) surface-mounted SOT-23-3
N-Channel 25 V 680mA (Ta) 350mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDV303N is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 25V and a continuous drain current of 680mA. It offers low on-state resistance (RDS(ON)) of 0.45 Ω at VGS = 4.5 V, making it suitable for battery-powered devices. The device is housed in a compact SOT-23 package, ensuring efficient space utilization in electronic designs.
The FDV303N is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 25V and a continuous drain current of 680mA. It offers low on-state resistance (RDS(ON)) of 0.45 Ω at VGS = 4.5 V, making it suitable for battery-powered devices. The device is housed in a compact SOT-23 package, ensuring efficient space utilization in electronic designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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