FDP8D5N10C
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 76A TO220-3
MOSFET N-CH 100V 76A TO220-3
Detailed specification
Detailed specification
N-Channel 100 V 76A (Tc) 2.4W (Ta), 107W (Tc) Through Hole TO-220-3
N-Channel 100 V 76A (Tc) 2.4W (Ta), 107W (Tc) Through Hole TO-220-3
Description
Description
The FDP8D5N10C is an N-Channel MOSFET featuring a maximum Drain-Source Voltage of 100 V and a continuous Drain Current of 76 A. It has an on-state resistance (RDS(on)) of 8.5 mΩ at VGS = 10 V. This device is designed for high-efficiency applications, utilizing onsemi's POWERTRENCH technology for superior switching performance and low reverse recovery charge.
The FDP8D5N10C is an N-Channel MOSFET featuring a maximum Drain-Source Voltage of 100 V and a continuous Drain Current of 76 A. It has an on-state resistance (RDS(on)) of 8.5 mΩ at VGS = 10 V. This device is designed for high-efficiency applications, utilizing onsemi's POWERTRENCH technology for superior switching performance and low reverse recovery charge.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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