FDN360P
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 2A SUPERSOT3
MOSFET P-CH 30V 2A SUPERSOT3
Detailed specification
Detailed specification
P-Channel 30 V 2A (Ta) 500mW (Ta) surface-mounted SOT-23-3
P-Channel 30 V 2A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN360P is a P-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of -30V and a continuous drain current of -2A. It offers low on-state resistance (RDS(ON)) of 80 mΩ at VGS = -10V, and a low gate charge of 6.2 nC, making it suitable for battery-powered devices requiring efficient switching performance.
The FDN360P is a P-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of -30V and a continuous drain current of -2A. It offers low on-state resistance (RDS(ON)) of 80 mΩ at VGS = -10V, and a low gate charge of 6.2 nC, making it suitable for battery-powered devices requiring efficient switching performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
FDN360P is also available from the following manufacturersContact sales
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