FDN339AN
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 20V 3A SOT23
MOSFET N-CH 20V 3A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN339AN is an N-Channel MOSFET designed for applications requiring low on-state resistance and minimal gate charge. With a maximum Drain-Source Voltage of 20V and a continuous Drain Current of 3A, it features RDS(on) values of 38mΩ at VGS = 4.5V and 50mΩ at VGS = 2.5V, ensuring efficient switching performance in compact SOT-23 packaging.
The FDN339AN is an N-Channel MOSFET designed for applications requiring low on-state resistance and minimal gate charge. With a maximum Drain-Source Voltage of 20V and a continuous Drain Current of 3A, it features RDS(on) values of 38mΩ at VGS = 4.5V and 50mΩ at VGS = 2.5V, ensuring efficient switching performance in compact SOT-23 packaging.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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