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FDN337N

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDN337N is ideal for use in industrial and consumer electronics applications, including notebook computers, portable phones, and PCMCIA cards. Its high efficiency and compact design make it suitable for battery-powered circuits requiring low in-line power loss and fast switching capabilities.
Specification
Specification
MOSFET N-CH 30V 2.2A SUPERSOT3
MOSFET N-CH 30V 2.2A SUPERSOT3
Detailed specification
Detailed specification
N-Channel 30 V 2.2A (Ta) 500mW (Ta) surface-mounted SOT-23-3
N-Channel 30 V 2.2A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN337N is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 2.2A. It has a low on-state resistance (RDS(on)) of 0.065Ω at VGS = 4.5V, making it suitable for fast switching and low power loss in compact surface mount designs.
The FDN337N is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 2.2A. It has a low on-state resistance (RDS(on)) of 0.065Ω at VGS = 4.5V, making it suitable for fast switching and low power loss in compact surface mount designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDN337N is also available from the following manufacturers
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