FDN335N
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
SOT-23 MOSFETS ROHS
SOT-23 MOSFETS ROHS
Detailed specification
Detailed specification
P-Channel 20 V 1.7A (Ta) 1W (Ta) surface-mounted SOT-23
P-Channel 20 V 1.7A (Ta) 1W (Ta) surface-mounted SOT-23
Description
Description
The FDN335N from UMW is a P-Channel MOSFET designed for surface mount applications, housed in a compact SOT-23 package. It operates at a maximum voltage of 20 V and can handle a continuous drain current of 1.7 A at ambient temperature (Ta). The device has a power dissipation capability of 1 W (Ta), making it suitable for various low to medium power applications. This component is compliant with RoHS standards, ensuring it meets environmental regulations. Its small footprint and efficient performance make it ideal for space-constrained designs.
The FDN335N from UMW is a P-Channel MOSFET designed for surface mount applications, housed in a compact SOT-23 package. It operates at a maximum voltage of 20 V and can handle a continuous drain current of 1.7 A at ambient temperature (Ta). The device has a power dissipation capability of 1 W (Ta), making it suitable for various low to medium power applications. This component is compliant with RoHS standards, ensuring it meets environmental regulations. Its small footprint and efficient performance make it ideal for space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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