FDN327N
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 20V 2A SOT23
MOSFET N-CH 20V 2A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN327N is an N-Channel MOSFET designed for applications requiring a maximum Drain-Source Voltage of 20V and continuous Drain Current of 2A. It features low on-state resistance (RDS(on)) values of 125mΩ at VGS = 4.5V, making it suitable for efficient power management and battery protection in compact SOT-23 packages.
The FDN327N is an N-Channel MOSFET designed for applications requiring a maximum Drain-Source Voltage of 20V and continuous Drain Current of 2A. It features low on-state resistance (RDS(on)) values of 125mΩ at VGS = 4.5V, making it suitable for efficient power management and battery protection in compact SOT-23 packages.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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