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FDD86113LZ

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDD86113LZ is designed for use in industrial applications, particularly in DC-DC conversion systems. Its high voltage rating and low on-state resistance make it ideal for power management and switching applications in various electronic devices.
Specification
Specification
MOSFET N-CH 100V 4.2A/5.5A DPAK
MOSFET N-CH 100V 4.2A/5.5A DPAK
Detailed specification
Detailed specification
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Description
Description
The FDD86113LZ is a 100V N-Channel MOSFET featuring Shielded Gate technology for low RDS(on) and high performance. It supports continuous drain currents of 5.5A at TC = 25 °C and 4.2A at TA = 25 °C, with a maximum power dissipation of 29W. The device is suitable for DC-DC conversion applications.
The FDD86113LZ is a 100V N-Channel MOSFET featuring Shielded Gate technology for low RDS(on) and high performance. It supports continuous drain currents of 5.5A at TC = 25 °C and 4.2A at TA = 25 °C, with a maximum power dissipation of 29W. The device is suitable for DC-DC conversion applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDD86113LZ is also available from the following manufacturers
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