FDD86113LZ
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 4.2A/5.5A DPAK
MOSFET N-CH 100V 4.2A/5.5A DPAK
Detailed specification
Detailed specification
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Description
Description
The FDD86113LZ is a 100V N-Channel MOSFET featuring Shielded Gate technology for low RDS(on) and high performance. It supports continuous drain currents of 5.5A at TC = 25 °C and 4.2A at TA = 25 °C, with a maximum power dissipation of 29W. The device is suitable for DC-DC conversion applications.
The FDD86113LZ is a 100V N-Channel MOSFET featuring Shielded Gate technology for low RDS(on) and high performance. It supports continuous drain currents of 5.5A at TC = 25 °C and 4.2A at TA = 25 °C, with a maximum power dissipation of 29W. The device is suitable for DC-DC conversion applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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