FDD5680
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 8.5A TO252
MOSFET N-CH 60V 8.5A TO252
Detailed specification
Detailed specification
N-Channel 60 V 8.5A (Ta) 2.8W (Ta), 60W (Tc) surface-mounted TO-252AA
N-Channel 60 V 8.5A (Ta) 2.8W (Ta), 60W (Tc) surface-mounted TO-252AA
Description
Description
The FDD5680 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage of 60V and a continuous drain current of 8.5A. It utilizes advanced PowerTrench technology to achieve a low on-state resistance (RDS(on)) of 0.021 Ω at VGS = 10V, ensuring efficient switching with a low gate charge of 33nC. This device is housed in a TO-252 package, suitable for surface mount applications.
The FDD5680 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage of 60V and a continuous drain current of 8.5A. It utilizes advanced PowerTrench technology to achieve a low on-state resistance (RDS(on)) of 0.021 Ω at VGS = 10V, ensuring efficient switching with a low gate charge of 33nC. This device is housed in a TO-252 package, suitable for surface mount applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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