FDD5353
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 11.5A/50A DPAK
MOSFET N-CH 60V 11.5A/50A DPAK
Detailed specification
Detailed specification
N-Channel 60 V 11.5A (Ta), 50A (Tc) 3.1W (Ta), 69W (Tc) surface-mounted TO-252AA
N-Channel 60 V 11.5A (Ta), 50A (Tc) 3.1W (Ta), 69W (Tc) surface-mounted TO-252AA
Description
Description
The FDD5353 is an N-Channel Power Trench® MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 50A at a case temperature (TC) of 25°C. It features a low on-state resistance (RDS(on)) of 12.3 mΩ at VGS = 10V and ID = 10.7A, making it suitable for high-efficiency applications. The device is housed in a DPAK package and is RoHS compliant.
The FDD5353 is an N-Channel Power Trench® MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 50A at a case temperature (TC) of 25°C. It features a low on-state resistance (RDS(on)) of 12.3 mΩ at VGS = 10V and ID = 10.7A, making it suitable for high-efficiency applications. The device is housed in a DPAK package and is RoHS compliant.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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