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FDD4685

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
The UMW FDD4685 is designed for use in industrial applications such as inverters and power supplies. Its high performance trench technology and low on-state resistance make it ideal for efficient power management in various electronic systems.
Specification
Specification
MOSFET P-CH 40V 8.4A/32A DPAK
MOSFET P-CH 40V 8.4A/32A DPAK
Detailed specification
Detailed specification
P-Channel 40 V 8.4A (Ta), 32A (Tc) 69W (Tc) surface-mounted TO-252 (DPAK)
P-Channel 40 V 8.4A (Ta), 32A (Tc) 69W (Tc) surface-mounted TO-252 (DPAK)
Description
Description
The UMW FDD4685 is a P-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of -40V and a continuous Drain Current (ID) of -8.4A at Ta = 25°C. It features low RDS(on) values of less than 27 mΩ at VGS = -10V, making it suitable for high-efficiency applications. The device is housed in a DPAK package and is RoHS compliant.
The UMW FDD4685 is a P-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of -40V and a continuous Drain Current (ID) of -8.4A at Ta = 25°C. It features low RDS(on) values of less than 27 mΩ at VGS = -10V, making it suitable for high-efficiency applications. The device is housed in a DPAK package and is RoHS compliant.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDD4685 is also available from the following manufacturers
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