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ESD8351MUT5G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
The ESD8351MUT5G is designed for ESD protection in high-speed data lines, typically used in consumer electronics, telecommunications, and automotive applications. Its low capacitance and clamping voltage characteristics make it suitable for protecting sensitive components in USB 2.0 and eSATA interfaces.
Specification
Specification
TVS DIODE 3.3VWM 11.2VC 2X3DFN
TVS DIODE 3.3VWM 11.2VC 2X3DFN
Detailed specification
Detailed specification
11.2V Clamp 5A (8/20µs) Ipp Tvs Diode Surface Mount 2-X3DFN (15.24mm x 7.62mm) (0.6x0.3) (0201)
11.2V Clamp 5A (8/20µs) Ipp Tvs Diode Surface Mount 2-X3DFN (15.24mm x 7.62mm) (0.6x0.3) (0201)
Description
Description
The ESD8351MUT5G from onsemi is a low capacitance ESD protection diode designed for high-speed data lines. It features a working peak voltage of 3.3V, a clamping voltage of 11.2V at 5A, and a maximum peak pulse current of 5A (8/20µs). Packaged in a 2-X3DFN (0.6x0.3) case, it provides robust protection against ESD events, making it ideal for applications like USB 2.0 and eSATA.
The ESD8351MUT5G from onsemi is a low capacitance ESD protection diode designed for high-speed data lines. It features a working peak voltage of 3.3V, a clamping voltage of 11.2V at 5A, and a maximum peak pulse current of 5A (8/20µs). Packaged in a 2-X3DFN (0.6x0.3) case, it provides robust protection against ESD events, making it ideal for applications like USB 2.0 and eSATA.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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