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EMT1DXV6T1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
EMT1DXV6T1G is ideal for general-purpose amplifier applications in industrial and automotive domains. Its low power consumption and compact SOT-563 package make it suitable for various electronic devices requiring efficient amplification and switching capabilities.
Specification
Specification
TRANS 2PNP 60V 0.1A SOT563
TRANS 2PNP 60V 0.1A SOT563
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 100mA 140MHz 500mW Surface Mount SOT-563
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 100mA 140MHz 500mW Surface Mount SOT-563
Description
Description
The EMT1DXV6T1G is a dual PNP bipolar transistor array designed for general-purpose amplifier applications. It features a collector-emitter voltage of 60V, a collector current of 100mA, and a transition frequency of 140MHz. Housed in a SOT-563 package, it is suitable for low power surface mount applications, with a total device dissipation of 500mW and a low VCE(SAT) of 0.5V.
The EMT1DXV6T1G is a dual PNP bipolar transistor array designed for general-purpose amplifier applications. It features a collector-emitter voltage of 60V, a collector current of 100mA, and a transition frequency of 140MHz. Housed in a SOT-563 package, it is suitable for low power surface mount applications, with a total device dissipation of 500mW and a low VCE(SAT) of 0.5V.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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