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EMD4DXV6T1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
EMD4DXV6T1G is designed for low power surface mount applications in industrial and automotive sectors. Its integrated bias resistor network allows for simplified circuit designs, making it suitable for applications requiring compact solutions and reduced component counts.
Specification
Specification
TRANS PREBIAS NPN/PNP 50V SOT563
TRANS PREBIAS NPN/PNP 50V SOT563
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Description
Description
The EMD4DXV6T1G is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a single SOT-563 package. It operates at a maximum collector-emitter voltage of 50V, with a collector current of 100mA and power dissipation of 500mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing board space.
The EMD4DXV6T1G is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a single SOT-563 package. It operates at a maximum collector-emitter voltage of 50V, with a collector current of 100mA and power dissipation of 500mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing board space.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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