EMD4DXV6T1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS NPN/PNP 50V SOT563
TRANS PREBIAS NPN/PNP 50V SOT563
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Description
Description
The EMD4DXV6T1G is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a single SOT-563 package. It operates at a maximum collector-emitter voltage of 50V, with a collector current of 100mA and power dissipation of 500mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing board space.
The EMD4DXV6T1G is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a single SOT-563 package. It operates at a maximum collector-emitter voltage of 50V, with a collector current of 100mA and power dissipation of 500mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing board space.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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