DTD543EE3TL
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS NPN 12V 0.5A EMT3
TRANS PREBIAS NPN 12V 0.5A EMT3
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 12 V 500 mA 260 MHz 150 mW surface-mounted EMT3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 12 V 500 mA 260 MHz 150 mW surface-mounted EMT3
Description
Description
The DTD543EE3TL from Rohm Semiconductor is a pre-biased NPN bipolar transistor designed for efficient switching and amplification applications. It operates at a maximum voltage of 12V and can handle a collector current of up to 500mA, making it suitable for various electronic circuits. With a transition frequency of 260 MHz and a power dissipation of 150 mW, this surface-mounted device (EMT3) is ideal for compact designs. Its pre-biased configuration simplifies circuit design by integrating a diode, enhancing performance in signal processing applications.
The DTD543EE3TL from Rohm Semiconductor is a pre-biased NPN bipolar transistor designed for efficient switching and amplification applications. It operates at a maximum voltage of 12V and can handle a collector current of up to 500mA, making it suitable for various electronic circuits. With a transition frequency of 260 MHz and a power dissipation of 150 mW, this surface-mounted device (EMT3) is ideal for compact designs. Its pre-biased configuration simplifies circuit design by integrating a diode, enhancing performance in signal processing applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.C