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DTC123EET1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
DTC123EET1G is suitable for industrial and automotive applications, particularly in digital circuits where space and component count reduction are critical. Its integrated bias resistor network enhances design efficiency, making it ideal for compact electronic devices.
Specification
Specification
TRANS PREBIAS NPN 50V 0.1A SC75
TRANS PREBIAS NPN 50V 0.1A SC75
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW surface-mounted SC-75, SOT-416
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW surface-mounted SC-75, SOT-416
Description
Description
The DTC123EET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
The DTC123EET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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