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DTC114YET1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
DTC114YET1G is suitable for digital applications, particularly in consumer electronics and automotive systems. Its pre-biased configuration allows for simplified circuit designs, making it ideal for use in compact electronic devices where space and efficiency are critical.
Specification
Specification
TRANS PREBIAS NPN 50V 0.1A SC75
TRANS PREBIAS NPN 50V 0.1A SC75
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW surface-mounted SC-75, SOT-416
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW surface-mounted SC-75, SOT-416
Description
Description
The DTC114YET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
The DTC114YET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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