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DTC114TET1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
DTC114TET1G is suitable for digital applications, particularly in consumer electronics and automotive systems. Its integrated bias resistor network allows for compact designs, making it ideal for space-constrained environments while ensuring reliable performance in various electronic circuits.
Specification
Specification
TRANS PREBIAS NPN 50V 0.1A SC75
TRANS PREBIAS NPN 50V 0.1A SC75
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416
Description
Description
The DTC114TET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
The DTC114TET1G is a pre-biased NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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