DTC114EM3T5G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS NPN 50V SOT723
TRANS PREBIAS NPN 50V SOT723
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723
Description
Description
The DTC114EM3T5G is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50 V, with a continuous collector current of 100 mA and a power dissipation of 260 mW. This device simplifies circuit design by integrating a bias resistor network, reducing component count and board space.
The DTC114EM3T5G is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50 V, with a continuous collector current of 100 mA and a power dissipation of 260 mW. This device simplifies circuit design by integrating a bias resistor network, reducing component count and board space.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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