DTA114EU3HZGT106
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS PNP 50V 0.1A UMT3
TRANS PREBIAS PNP 50V 0.1A UMT3
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 200 mW surface-mounted UMT3
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 200 mW surface-mounted UMT3
Description
Description
The DTA114EU3HZGT106 is a pre-biased PNP bipolar transistor (BJT) designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50V and can handle a collector current of up to 100mA. With a transition frequency of 250 MHz and a power dissipation of 200 mW, this component is suitable for high-frequency switching applications. The UMT3 package ensures a compact footprint, making it ideal for space-constrained designs in consumer electronics and communication devices.
The DTA114EU3HZGT106 is a pre-biased PNP bipolar transistor (BJT) designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50V and can handle a collector current of up to 100mA. With a transition frequency of 250 MHz and a power dissipation of 200 mW, this component is suitable for high-frequency switching applications. The UMT3 package ensures a compact footprint, making it ideal for space-constrained designs in consumer electronics and communication devices.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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