DTA114EM3T5G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS PNP 50V SOT723
TRANS PREBIAS PNP 50V SOT723
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 260 mW surface-mounted SOT-723
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 260 mW surface-mounted SOT-723
Description
Description
The DTA114EM3T5G is a pre-biased PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 260 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
The DTA114EM3T5G is a pre-biased PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 260 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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