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DTA114EM3T5G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
DTA114EM3T5G is suitable for automotive and industrial applications, particularly in digital circuits where space and component count reduction is critical. Its integrated bias resistor network enhances design efficiency, making it ideal for compact electronic systems.
Specification
Specification
TRANS PREBIAS PNP 50V SOT723
TRANS PREBIAS PNP 50V SOT723
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 260 mW surface-mounted SOT-723
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 260 mW surface-mounted SOT-723
Description
Description
The DTA114EM3T5G is a pre-biased PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 260 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
The DTA114EM3T5G is a pre-biased PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 260 mW. This device integrates a monolithic bias resistor network, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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