DN3765K4-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 650V 300MA TO252-3
MOSFET N-CH 650V 300MA TO252-3
Detailed specification
Detailed specification
N-Channel 650 V 300mA (Tj) 2.5W (Ta) surface-mounted TO-252 (DPAK)
N-Channel 650 V 300mA (Tj) 2.5W (Ta) surface-mounted TO-252 (DPAK)
Description
Description
The DN3765K4-G is an N-Channel MOSFET with a breakdown voltage of 650V and a maximum continuous drain current of 300mA. It features low on-resistance (RDS(ON) of 8.0Ω), fast switching speeds, and high input impedance, making it suitable for various applications. The device is housed in a TO-252 (DPAK) package, ensuring efficient thermal performance.
The DN3765K4-G is an N-Channel MOSFET with a breakdown voltage of 650V and a maximum continuous drain current of 300mA. It features low on-resistance (RDS(ON) of 8.0Ω), fast switching speeds, and high input impedance, making it suitable for various applications. The device is housed in a TO-252 (DPAK) package, ensuring efficient thermal performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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