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Manufacturers

DN3545N8-G

Manufacturer

MICROCHIP TECHNOLOGY

data-sheet
Data sheet
Data sheet
DN3545N8-G is designed for industrial applications, particularly in solid-state relays, converters, linear amplifiers, and power supply circuits. Its high breakdown voltage and low on-resistance make it ideal for use in telecommunications and other electronic systems requiring efficient switching and amplification.
Specification
Specification
MOSFET N-CH 450V 200MA TO243AA
MOSFET N-CH 450V 200MA TO243AA
Detailed specification
Detailed specification
N-Channel 450 V 200mA (Ta) 1.6W (Ta) surface-mounted TO-243AA (SOT-89)
N-Channel 450 V 200mA (Ta) 1.6W (Ta) surface-mounted TO-243AA (SOT-89)
Description
Description
The DN3545N8-G is an N-Channel MOSFET with a breakdown voltage of 450V and a maximum continuous drain current of 200mA. It features low on-resistance (RDS(on) max 20Ω), fast switching speeds, and high input impedance, making it suitable for various applications including solid-state relays and power supply circuits. The device is housed in a surface-mounted TO-243AA package.
The DN3545N8-G is an N-Channel MOSFET with a breakdown voltage of 450V and a maximum continuous drain current of 200mA. It features low on-resistance (RDS(on) max 20Ω), fast switching speeds, and high input impedance, making it suitable for various applications including solid-state relays and power supply circuits. The device is housed in a surface-mounted TO-243AA package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Patrick Wiström031-338 96 64patrick.wistrom@westcomp.se
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Petra Målberg031-338 96 79petra.malberg@westcomp.se
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Richard Mattsson031-338 96 84richard.mattsson@westcomp.se
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