DN3535N8-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 350V 230MA TO243AA
MOSFET N-CH 350V 230MA TO243AA
Detailed specification
Detailed specification
N-Channel 350 V 230mA (Tj) 1.6W (Ta) surface-mounted TO-243AA (SOT-89)
N-Channel 350 V 230mA (Tj) 1.6W (Ta) surface-mounted TO-243AA (SOT-89)
Description
Description
The DN3535N8-G is an N-Channel MOSFET with a breakdown voltage of 350V and a continuous drain current of 230mA. It features low on-resistance (RDS(ON) max 10Ω) and fast switching speeds, making it suitable for various applications. The device is housed in a TO-243AA (SOT-89) package, ensuring efficient thermal performance with a power dissipation of 1.6W.
The DN3535N8-G is an N-Channel MOSFET with a breakdown voltage of 350V and a continuous drain current of 230mA. It features low on-resistance (RDS(ON) max 10Ω) and fast switching speeds, making it suitable for various applications. The device is housed in a TO-243AA (SOT-89) package, ensuring efficient thermal performance with a power dissipation of 1.6W.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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