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DN3525N8-G

Manufacturer

MICROCHIP TECHNOLOGY

data-sheet
Data sheet
Data sheet
The DN3525N8-G is designed for industrial applications, particularly in solid-state relays, converters, and power supply circuits. Its high breakdown voltage and low on-resistance make it ideal for use in telecommunications switches and constant-current sources, ensuring reliable performance in demanding environments.
Specification
Specification
MOSFET N-CH 250V 360MA TO243AA
MOSFET N-CH 250V 360MA TO243AA
Detailed specification
Detailed specification
N-Channel 250 V 360mA (Tj) 1.6W (Ta) surface-mounted TO-243AA (SOT-89)
N-Channel 250 V 360mA (Tj) 1.6W (Ta) surface-mounted TO-243AA (SOT-89)
Description
Description
The DN3525N8-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 250V and a maximum continuous drain current of 360mA. It features low on-resistance (RDS(on) of 6Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-243AA (SOT-89) package.
The DN3525N8-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 250V and a maximum continuous drain current of 360mA. It features low on-resistance (RDS(on) of 6Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-243AA (SOT-89) package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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