DN3135N8-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 350V 135MA TO243AA
MOSFET N-CH 350V 135MA TO243AA
Detailed specification
Detailed specification
N-Channel 350 V 135mA (Tj) 1.3W (Ta) surface-mounted TO-243AA (SOT-89)
N-Channel 350 V 135mA (Tj) 1.3W (Ta) surface-mounted TO-243AA (SOT-89)
Description
Description
The DN3135N8-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 350V and a maximum continuous drain current of 135mA. It features low on-resistance (RDS(on) of 35Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-243AA (SOT-89) package.
The DN3135N8-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 350V and a maximum continuous drain current of 135mA. It features low on-resistance (RDS(on) of 35Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-243AA (SOT-89) package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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