DN3135K1-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 350V 72MA SOT23-3
MOSFET N-CH 350V 72MA SOT23-3
Detailed specification
Detailed specification
N-Channel 350 V 72mA (Tj) 360mW (Ta) surface-mounted SOT-23-3
N-Channel 350 V 72mA (Tj) 360mW (Ta) surface-mounted SOT-23-3
Description
Description
The DN3135K1-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 350V and a maximum continuous drain current of 72mA. It features low on-resistance (RDS(on) of 35Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device is housed in a compact SOT-23-3 package.
The DN3135K1-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 350V and a maximum continuous drain current of 72mA. It features low on-resistance (RDS(on) of 35Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device is housed in a compact SOT-23-3 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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