DN2625K4-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 250V 1.1A TO252
MOSFET N-CH 250V 1.1A TO252
Detailed specification
Detailed specification
N-Channel 250 V 1.1A (Tj) surface-mounted TO-252 (DPAK)
N-Channel 250 V 1.1A (Tj) surface-mounted TO-252 (DPAK)
Description
Description
The DN2625K4-G is an N-Channel Depletion-mode MOSFET designed for high-performance applications. It features a breakdown voltage of 250V and a continuous drain current of 1.1A. This surface-mounted TO-252 package device exhibits low on-state resistance (RDS(on)) of 3.5Ω, making it suitable for inductive loads and applications requiring low switching losses and high input impedance.
The DN2625K4-G is an N-Channel Depletion-mode MOSFET designed for high-performance applications. It features a breakdown voltage of 250V and a continuous drain current of 1.1A. This surface-mounted TO-252 package device exhibits low on-state resistance (RDS(on)) of 3.5Ω, making it suitable for inductive loads and applications requiring low switching losses and high input impedance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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