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DN2535N3-G

Manufacturer

MICROCHIP TECHNOLOGY

data-sheet
Data sheet
Data sheet
DN2535N3-G is designed for industrial applications, particularly in solid-state relays, converters, linear amplifiers, and power supply circuits. Its high breakdown voltage and low on-resistance make it ideal for use in telecommunications and other electronic systems requiring reliable switching and amplification.
Specification
Specification
MOSFET N-CH 350V 120MA TO92
MOSFET N-CH 350V 120MA TO92
Detailed specification
Detailed specification
N-Channel 350 V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226)
N-Channel 350 V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226)
Description
Description
The DN2535N3-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 350V and a maximum continuous drain current of 120mA. It features low on-resistance (RDS(ON) of 25Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device is housed in a TO-92 package.
The DN2535N3-G is an N-Channel Depletion-mode MOSFET with a breakdown voltage of 350V and a maximum continuous drain current of 120mA. It features low on-resistance (RDS(ON) of 25Ω), high input impedance, and fast switching speeds, making it suitable for various applications including solid-state relays and power supply circuits. The device is housed in a TO-92 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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