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DN2530N8-G

Manufacturer

MICROCHIP TECHNOLOGY

data-sheet
Data sheet
Data sheet
The DN2530N8-G is designed for use in industrial and telecommunications applications. Its characteristics make it ideal for normally-on switches, solid-state relays, converters, linear amplifiers, constant current sources, and power supply circuits, where high breakdown voltage and fast switching are essential.
Specification
Specification
MOSFET N-CH 300V 200MA TO243AA
MOSFET N-CH 300V 200MA TO243AA
Detailed specification
Detailed specification
N-Channel 300 V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
N-Channel 300 V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Description
Description
The DN2530N8-G is an N-Channel depletion-mode MOSFET with a maximum drain-to-source voltage of 300V and a continuous drain current of 200mA. It features low on-resistance (RDS(ON) max 12Ω), high input impedance, low input capacitance, and fast switching speeds. This surface-mounted device is suitable for various applications including solid-state relays and power supply circuits.
The DN2530N8-G is an N-Channel depletion-mode MOSFET with a maximum drain-to-source voltage of 300V and a continuous drain current of 200mA. It features low on-resistance (RDS(ON) max 12Ω), high input impedance, low input capacitance, and fast switching speeds. This surface-mounted device is suitable for various applications including solid-state relays and power supply circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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