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DN1509N8-G

Manufacturer

MICROCHIP TECHNOLOGY

data-sheet
Data sheet
Data sheet
DN1509N8-G is designed for use in industrial and telecommunications applications. Its characteristics make it ideal for normally-on switches, battery-operated systems, converters, linear amplifiers, and constant current sources, where low on-resistance and fast switching speeds are essential.
Specification
Specification
MOSFET N-CH 90V 360MA TO243AA
MOSFET N-CH 90V 360MA TO243AA
Detailed specification
Detailed specification
N-Channel 90 V 360mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
N-Channel 90 V 360mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Description
Description
The DN1509N8-G is an N-Channel depletion-mode MOSFET with a maximum drain-to-source voltage of 90V and a continuous drain current of 360mA. It features low on-resistance (RDS(on) max 6.0Ω), high input impedance, and fast switching speeds, making it suitable for various applications including battery-operated systems and linear amplifiers. The device is housed in a TO-243AA (SOT-89) package.
The DN1509N8-G is an N-Channel depletion-mode MOSFET with a maximum drain-to-source voltage of 90V and a continuous drain current of 360mA. It features low on-resistance (RDS(on) max 6.0Ω), high input impedance, and fast switching speeds, making it suitable for various applications including battery-operated systems and linear amplifiers. The device is housed in a TO-243AA (SOT-89) package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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