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CUS15S40,H3F

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
CUS15S40 is ideal for high-speed switching applications in various domains including consumer electronics, telecommunications, and industrial systems. Its low forward voltage and compact surface mount design make it suitable for space-constrained environments requiring efficient power management.
Specification
Specification
DIODE SCHOTTKY 40V 1.5A USC
DIODE SCHOTTKY 40V 1.5A USC
Detailed specification
Detailed specification
Diode 40 V 1.5A surface-mounted USC
Diode 40 V 1.5A surface-mounted USC
Description
Description
The CUS15S40 Schottky Barrier Diode from Toshiba Semiconductor features a peak reverse voltage of 40V and a forward current rating of 1.5A. It offers low forward voltage of 0.47V (typical) and is designed for high-speed switching applications. The USC surface mount package ensures compact integration in electronic circuits.
The CUS15S40 Schottky Barrier Diode from Toshiba Semiconductor features a peak reverse voltage of 40V and a forward current rating of 1.5A. It offers low forward voltage of 0.47V (typical) and is designed for high-speed switching applications. The USC surface mount package ensures compact integration in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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