CRH01(TE85L,Q,M)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 200V 1A S-FLAT
DIODE GEN PURP 200V 1A S-FLAT
Detailed specification
Detailed specification
Diode 200 V 1A Surface Mount S-FLAT (1.6 mm x 3.5 mm) (0.063 in x 0.138 in)
Diode 200 V 1A Surface Mount S-FLAT (1.6 mm x 3.5 mm) (0.063 in x 0.138 in)
Description
Description
The CRH01 is a high-efficiency silicon epitaxial rectifier diode designed for general-purpose applications. It features a repetitive peak reverse voltage of 200 V and an average forward current of 1 A. The diode is housed in a compact S-FLAT surface mount package (1.6x3.5 mm), ensuring suitability for space-constrained designs. It offers a maximum peak forward voltage of 0.98 V and a very fast reverse-recovery time of 35 ns, making it ideal for switching mode power supply applications.
The CRH01 is a high-efficiency silicon epitaxial rectifier diode designed for general-purpose applications. It features a repetitive peak reverse voltage of 200 V and an average forward current of 1 A. The diode is housed in a compact S-FLAT surface mount package (1.6x3.5 mm), ensuring suitability for space-constrained designs. It offers a maximum peak forward voltage of 0.98 V and a very fast reverse-recovery time of 35 ns, making it ideal for switching mode power supply applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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