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CNY17F4TVM

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
CNY17F4TVM is designed for use in power supply regulators, digital logic inputs, microprocessor inputs, appliance sensor systems, and industrial controls. Its high isolation voltage and low noise susceptibility make it ideal for applications in industrial and consumer electronics where reliable signal transmission is critical.
Specification
Specification
OPTOISO 4.17KV TRANS 6DIP
OPTOISO 4.17KV TRANS 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Description
Description
The CNY17F4TVM is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-pin DIP package, making it suitable for various applications requiring electrical isolation.
The CNY17F4TVM is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-pin DIP package, making it suitable for various applications requiring electrical isolation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
CNY17F4TVM is also available from the following manufacturers
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