CNY17F4TVM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS 6DIP
OPTOISO 4.17KV TRANS 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Description
Description
The CNY17F4TVM is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-pin DIP package, making it suitable for various applications requiring electrical isolation.
The CNY17F4TVM is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-pin DIP package, making it suitable for various applications requiring electrical isolation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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